1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m 900 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 10n90 10 a 12n90 12 a 13n90 13 a i dm t c = 25 c, 10n90 40 a pulse width limited by t jm 12n90 48 a 13n90 13 a i ar t c = 25 c 10n90 10 a 12n90 12 a 13n90 13 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 900 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j =25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 10n90 1.1 12n90 0.9 13n90 0.8 pulse test, t 300 s, duty cycle d 2 % hiperfet tm power mosfets n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 aa (ixfm) g = gate, d = drain, s = source, tab = drain features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters synchronous rectification battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls low voltage relays advantages easy to mount with 1 screw (to-247) (isolated mounting screw hole) space savings high power density d g v dss i d25 r ds(on) ixfh/ixfm 10 n90 900 v 10 a 1.1 ixfh/ixfm 12 n90 900 v 12 a 0.9 ixfh13 n90 900 v 13 a 0.8 t rr 250 ns 91530g (3/98) (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 6 12 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 315 pf c rss 90 pf t d(on) 18 50 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 12 50 ns t d(off) r g = 2 (external) 51 100 ns t f 18 50 ns q g(on) 123 155 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 45 nc q gd 49 80 nc r thjc 0.42 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 10n90 10 a 12n90 12 a 13n90 13 a i sm repetitive; 10n90 40 a pulse width limited by t jm 12n90 48 a 13n90 52 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j =25 c 250 ns t j = 125 c 400 ns q rm t j =25 c1 c t j = 125 c2 c i rm t j =25 c10a t j = 125 c15a i f = i s -di/dt = 100 a/ s, v r = 100 v to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-204 aa (ixfm) outline dim. millimeter inches min. max. min. max. a 38.61 39.12 1.520 1.540 b 19.43 19.94 - 0.785 c 6.40 9.14 0.252 0.360 d 0.97 1.09 0.038 0.043 e 1.53 2.92 0.060 0.115 f 30.15 bsc 1.187 bsc g 10.67 11.17 0.420 0.440 h 5.21 5.71 0.205 0.225 j 16.64 17.14 0.655 0.675 k 11.18 12.19 0.440 0.480 q 3.84 4.19 0.151 0.165 r 25.16 25.90 0.991 1.020 ixfh 10n90 ixfh 12n90 ixfh 13n90 ixfm 10n90 ixfm 12n90 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved ixfh 10n90 ixfh 12n90 ixfh 13n90 ixfm 10n90 ixfm 12n90 fig. 1 output characteristics fig. 2 input admittance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 bv dss v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 10n90 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 0 5 10 15 20 25 r ds(on) - normalized 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v gs - volts 012345678910 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 v ds - volts 0 5 10 15 20 i d - amperes 0 2 4 6 8 10 12 14 16 18 20 6v 7v v gs = 10v 12n90 i d = 6a 5v t j = 25 c t j = 25 c t j = 25 c v gs = 10v v gs = 15v
4 - 4 ? 2000 ixys all rights reserved ixfh 10n90 ixfh 12n90 ixfh 13n90 ixfm 10n90 ixfm 12n90 fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.9 capacitance curves fig.10source current vs. source to drain voltage fig.11 transient thermal impedance v ds - volts 1 10 100 1000 i d - amperes 0.1 1 10 gate charge - ncoulombs 0 255075100125150 v ge - volts 0 2 4 6 8 10 v sd - volts 0.00.20.40.60.81.01.21.4 i d - amperes 0 2 4 6 8 10 12 14 16 18 v ce - volts 0 5 10 15 20 25 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k / w 0.001 0.01 0.1 1 c rss c oss v ds = 450v i d = 13a i g = 10ma 100ms 10ms 1ms 100s 10s limited by r ds(on) c iss d=0.5 d=0.2 single pulse f = 1 mhz v ds = 25v t j = 125 c t j = 25 c d=0.01 d=0.02 d=0.05 d=0.1
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